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Gold Patrons

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Silver Patrons

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Supporter Patrons

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With the support of

Regione Veneto
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INGMO logo   UNIMORE logo
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General purpose of the conferences

The aim of ESSDERC and ESSCIRC is to provide an annual European forum for the presentation and discussion of recent advances in solid-state devices and circuits. The increasing level of integration for system-on-chip design made available by advances in silicon technology is, more than ever before, calling for a deeper interaction among technologists, device experts, IC designers, and system designers. While keeping separate Technical Program Committees, ESSCIRC and ESSDERC are governed by a common Steering Committee and share Plenary Keynote Presentations and Joint Sessions bridging both communities. Attendees registered for either conference are encouraged to attend any of the scheduled parallel sessions, regardless to which conference they belong.

ESSDERC 2014 main topics

Advanced CMOS: Devices, Process and Integration

Ultimate CMOS scaling for high performance, low power and low voltage devices, novel MOS device architectures, circuit/device interaction and co-optimization, high-mobility channel engineered devices. Front-end and back-end processes. 3D integration, interconnects, low k dielectrics, advances in integration for ULSI. RF and photonic integration.
 

Microwave, Opto and Power Solid-State Devices

RF CMOS, analog and mixed signal devices, passives, antennas, filters, Bipolar, BiCMOS, smart power devices, high-voltage, high power devices (including SiC & GaN based devices), high temperature operation, IC cooling. Integrated RF components. Compound semiconductors, opto and photovoltaic devices.
 

Modeling and Simulation

Numerical, analytical and statistical modeling of solid-state electronic and optoelectronic devices, quantum mechanical and non-stationary transport phenomena, ballistic transport, compact circuit modeling, modeling and simulation of front-end and back-end. Electro-thermal modeling and simulation.
 

Characterization, Reliability and Yield

Reliability issues for materials and devices (high-k and low-k materials), reliability of advanced interconnects, ESD, soft errors, noise and mismatch behavior, bias temperature instabilities, EMI, defect monitoring and control, metrology, physics of failure analysis. Test structures and methodologies.
 

Advanced and Emerging Memories

Novel memory cell concepts, embedded and stand-alone memories, DRAM, FeRAM, MRAM, PCRAM, CBRAM, Flash, SONOS, nanocrystal memories, single and few electron memories, 3D IC stacks, organic memories, NEMS-based device, 3D integration, reliability and modeling.
 

MEMS, NEMS, Bio-sensors and Display Technologies

Design, fabrication, modeling, reliability and packaging of all physical sensors and MEMS categories. resonators, switches, (bio)-sensors, and actuators. CCDs and CMOS imagers, optical on chip communication, display technologies, TFTs, organic electronics, flexible substrate electronics, SoC and SiP.
 

Emerging non-CMOS Devices and Technologies

Nanotubes, nanowires and nanoparticles (including carbon and grapheme) for electronic, optoelectronic and sensor applications, molecular and quantum devices, nanophotonics, spintronics, self-assembling methods, photonic devices. Energy harvesting. Digital and analog devices, high frequency devices including THz.
 

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